Presentation Schedule for the thirteen Student Paper Finalists:
Monday, October 12, 2:00 p.m. (Waterbury)
B.2 A Watt-Class, High-Efficiency, Digitally Modulated Polar Power Amplifier in SOI CMOS
V. Diddi, H. Gheidi, Youjiang Liu, J. F. Buckwalter and P. Asbeck, University of California San Diego, La Jolla, United States
Monday, October 12, 2:40 p.m. (Waterbury)
B.4 28 GHz >250 mW CMOS Power Amplifier Using Multigate-Cell Design
J. A. Jayamon1, J. F. Buckwalter1,2, and P. M. Asbeck1, 1University of California San Diego, La Jolla, United States, 2University of California Santa Barbara, Santa Barbara, United States
Monday, October 12, 2:20 p.m. (Gallery)
C.3 Evaluating Thermal Composites Using Asymptotic Homogenization
M. Beckert1, J. H. Nadler2, 1Georgia Institute of Technology, Atlanta, United States, 2Georgia Tech Research Institute, Atlanta, United States
Monday, October 12, 4:20 p.m. (Waterbury)
D.3 High-gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power
E. Ture, D. Schwantuschke, A. Tessman, S. Wagner, P. Brückner, M. Mikulla, R. Quay, O. Ambacher, Fraunhofer Institute for Applied Solid-State Physics, Freiburg, Germany
Tuesday, October 12, 9:40 a.m. (Waterbury)
F.4 250 GHz SiGe-BiCMOS Cascaded Single-Stage Distributed Amplifier
P. Testa, R. Paulo, C. Carta, F. Ellinger, Technische Universitat Dresden, Germany
Tuesday, October 12, 9:40 a.m. (Gallery)
G.4 An Evaluation of extraction methods for the external collector resistance for InP DHBTs
T. Nardmann1, M. Schroter1,2, 1Technical University of Dresden, Dresden, Germany, 2UC San Diego, La Jolla, United States
Tuesday, October 12, 2:20 p.m. (Gallery)
I.3 A 4.2-W 10-GHz GaN MMIC Doherty Power Amplifier
M. Coffey1, P. MomenRoodaki1, A. Zai2, Z. Popović1, 1University of Colorado Boulder, Boulder, United States, 2Lincoln Laboratory, Lexington, United States
Tuesday, October 12, 9:30 a.m. (Gallery)
L.3 MIT virtual source RF model as a tool for GaN-based LNA and oscillator design
U. Radhakrishna, P. Choi, L.-S. Peh, D. Antoniadis, MIT, Cambridge, United States
Wednesday, October 12, 9:30 a.m. (Gallery)
M.4 A New Active Quasi-Circulator Structure with High Isolation for 77-GHz Automotive FMCW Radar Systems in SiGe Technology
M. Porranzl1, C. Wagner2, H. Jaeger2, A. Stelzer1
1Johannes Kepler Univeristät Linz, Linz, Austria, 2DICE, Linz, Austria
Wednesday, October 12, 9:50 a.m. (Gallery)
M.5 A 70 GHz Bidirectional Front-End for Half-Duplex Transceiver in 90-nm SiGe BiCMOS
F. Kijsanayotin1, J. Li1, J. Buckwalter2
1Department of Electrical & Computer Engineering, University of California, San Diego, La Jolla, United States. 2Department of Electrical & Computer Engineering, University of California, Santa Barbara, Santa Barbara, United States
Wednesday, October 12, 11:40 a.m. (Gallery)
O.4 A 15-Gb/s AC-coupled VCSEL Driver with Waveform Shaping in 65nm CMOS
V. Kozlov and A.C. Carusone
University of Toronto, Toronto, Ontario, Canada
Wednesday, October 12, 2:30 p.m. (Waterbury)
P.3 Multi-Level Chireix Outphasing GaN MMIC PA
M. Litchfield, Z. Popović, University of Colorado at Boulder, Boulder, United States
Wednesday, October 12, 2:30 p.m. (Gallery)
Q.3 A Low Noise, DC-135GHz MOS-HBT Distributed Amplifier for Receiver Applications
J. Hoffman1, S. P. Voinigescu1, P. Chevalier2, A. Cathelin2, and P. Schvan3, 1University of Toronto, Toronto, Canada, 2STMicroelectronics, Crolles, France, 3Ciena Corporation, Ottawa, Canada