It is with great pleasure that I invite you to be a part of the 2014 IEEE Compound Semiconductor IC Symposium (CSICS). Thanks to the efforts of the many dedicated volunteers on the organizing committee and the generous support of the IEEE Electron Devices, Microwave Theory and Techniques, and Solid-State Circuits Societies, CSICS is proud to offer a world class technical program. For this 36th edition, CSICS will be held on October 19-22 in La Jolla, San Diego, California.
From its origins in 1978 as an international gathering for distinguished experts to present their latest results in GaAs IC technology and Monolithic Microwave Integrated Circuit design, the symposium has become much more and now embraces GaN, InP, SiGe, nanoscale CMOS, and many other emerging technologies. This convergence allows CSICS to offer a perfect blend of state of the art IC performance, innovative design techniques, and advanced device technologies. There are no other events in the world where you can see GaN HPAs, InP THz PAs, 100 Gb/s CMOS/SiGe transceivers, GaN HEMT power devices, and advances in compact modeling all presented alongside each other.
Following its tradition, CSICS will include presentations from worldwide submissions on all aspects of the technology, from materials and device fabrication and modeling to IC design and testing, high-volume manufacturing, and system applications. It will also feature the very latest results in RF/microwave, millimeter-wave, THz, analog mixed signal, and optoelectronic integrated circuits.
On Sunday prior to the symposium opening, CSICS will offer two topical short courses: “GaN HEMT Device Modeling” and “Fundamentals of Power Conversion and Envelope Tracking.” Taught by leading experts, they are intended for both technologists and IC designers who seek a comprehensive understanding of the latest trends and techniques in GaN technology and circuit design. CSICS is also very proud to present two Primer courses this year instead of the customary single course: “Fundamentals of A/D Converters” and “Introduction to Si RFIC design.” Both tutorials introduce the key concepts, techniques and practices for Si mixed signal and RF circuit design and are guaranteed to provide valuable insight for designers of all backgrounds.
As a complement to the technical program, the symposium includes numerous social events that allow participants to interact and network in a relaxed setting. These include the Sunday Evening Opening Reception, the Monday Evening Exhibition Opening Reception, and the Technology Exhibition Luncheon on Tuesday. CSICS also offers a daily breakfast and AM/PM coffee breaks on Monday through to Wednesday.
Please join us at the Compound Semiconductor IC Symposium in beautiful La Jolla, California.
Douglas S. McPherson, Chair
2014 IEEE CSICS
2014 IEEE CSICS